Site-controlled In(Ga)As quantum dots with narrow emission linewidth for integration into nanophotonic devices

Alexander Huggenberger; Christian Schneider; Tobias Heindel; Martin Kamp; Stephan Reitzenstein; Sven Höfling; Lukas Worschech; Alfred Forchel

Proceedings of the International Quantum Electronics Conference and Conference on Lasers and Electro-Optics Pacific Rim 2011
(Optica Publishing Group, 2011),
paper J946

Site-controlled In(Ga)As quantum dots with narrow emission linewidth for integration into nanophotonic devices

Alexander Huggenberger, Christian Schneider, Tobias Heindel, Martin Kamp, Stephan Reitzenstein, Sven Höfling, Lukas Worschech, and Alfred Forchel

Conference on Lasers and Electro-Optics/Pacific Rim 2011

Sydney Australia
28 August–1 September 2011
ISBN: 978-0-9775657-7-1

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Session 3: Symposium 1- Nanoparticles and Applications (NPA)

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A. Huggenberger, C. Schneider, T. Heindel, M. Kamp, S. Reitzenstein, S. Höfling, L. Worschech, and A. Forchel, "Site-controlled In(Ga)As quantum dots with narrow emission linewidth for integration into nanophotonic devices," in Proceedings of the International Quantum Electronics Conference and Conference on Lasers and Electro-Optics Pacific Rim 2011, (Optica Publishing Group, 2011), paper J946.

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Abstract

Site-controlled In(Ga)As quantum dots (QD) were grown by molecular beam epitaxy on pre-patterned GaAs (001) substrates and integrated into optical resonators. The emission linewidth of single site-controlled QDs was probed using a standard micro-photoluminescence setup and exhibits values down to 38 µeV. We find a typical fine structure splitting of ~32 µeV. Both values are comparable to self-assembled QDs.

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