Abstract
From this research, we report on the performances of Cu(In,Ga)Se2 (CIGS) thin film solar cells device simulation of the carrier concentration and thickness of CdS buffer layer which were respectively varied from 1012 to 1020 cm−3 and 10 nm to 100 nm, to find out an optimum thickness of around 40–50 nm of high-efficiency CdS buffer layer, the optimum of carrier concentration is found to be 1017 cm−3 revealed the best efficiency of 18.20%.
© 2011 AOS
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