Abstract
Temperature dependence of photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to investigate the recombination process in InGaN/GaN light-emitting diodes (LEDs). The results exhibited that the nonradiative recombination process can be explained by diffusion-controlled kinetic.
© 2011 AOS
PDF ArticleMore Like This
Animesh Banerjee, Meng Zhang, and Pallab Bhattacharya
CMU3 CLEO: Science and Innovations (CLEO:S&I) 2011
C. H. Wang, W. T. Chang, S. P. Chang, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang
CWF4 CLEO: Science and Innovations (CLEO:S&I) 2011
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, and Z. Mi
CMU4 CLEO: Science and Innovations (CLEO:S&I) 2011