We present a method to simultaneously realize phase-matching and reduce the effective carrier lifetime in the Si waveguide, with which −2.6-dB conversion efficiency and 300-nm conversion bandwidth are achieved in a properly designed Si waveguide.

© 2009 IEEE

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription