Abstract

Femtosecond laser sources have become essential for a large range of applications, such as high-capacity telecommunication systems, ultrafast spectroscopy, micromachining, and optical coherence tomography. For the past decade, the interest on the Yb3+-doped materials for femtosecond diode-pumped laser applications is growing, which are established to be particularly suitable for directly diode-pumped, high-power, solid-state sources. A new Yb-doped oxyorthosilicate laser crystal, Yb:Gd2SiO5 (Yb:GSO), and mixed crystals such as Yb:(Lu1−xYx)2SiO5 and Yb:(Gd1−xYx)2SiO5 have been grown. Laser experiment, a slope efficiency up to 86%. a low threshold of 77mW and 343fs mode-locked pulses were achieved for a continuous wave Yb:GSO laser around 1031, 1048,1088 and 1092.5nm respectively. 210-fs laser pulses were achieved at 1093-nm by a self-starting mode-locked Yb:GYSO laser.

© 2009 IEEE

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