Abstract

Focused ion beam technique has been applied to fabricate ring resonators in Ge-Sb-S thin films for optoelectronic applications. The CVD-grown Ge-Sb-S thin films have been characterizatezed by micro-Raman, scanning electron microscopy, energy dispersive X-ray analysis and UV-VIS-NIR spectroscopy and the properties of the resonator are being assessed.

© 2009 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription