Focused ion beam technique has been applied to fabricate ring resonators in Ge-Sb-S thin films for optoelectronic applications. The CVD-grown Ge-Sb-S thin films have been characterizatezed by micro-Raman, scanning electron microscopy, energy dispersive X-ray analysis and UV-VIS-NIR spectroscopy and the properties of the resonator are being assessed.

© 2009 IEEE

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