Focused Ion Beam Etched Ring-Resonator in CVD-grown Ge-Sb-S Thin Films

C. C. Huang; Y. -L. D. Ho; K. Knight; J. G. Rarity; D.W. Hewak

Conference on Lasers and Electro-Optics/Pacific Rim 2009
(Optica Publishing Group, 2009),
paper TUP6_9

Focused Ion Beam Etched Ring-Resonator in CVD-grown Ge-Sb-S Thin Films

C. C. Huang, Y. -L. D. Ho, K. Knight, J. G. Rarity, and D.W. Hewak

Conference on Lasers and Electro-Optics/Pacific Rim 2009

Shanghai China
30 August–3 September 2009
ISBN: 978-1-4244-3830-3

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C. C. Huang, Y. -. D. Ho, K. Knight, J. G. Rarity, and D. W. Hewak, "Focused Ion Beam Etched Ring-Resonator in CVD-grown Ge-Sb-S Thin Films," in Conference on Lasers and Electro-Optics/Pacific Rim 2009, (Optica Publishing Group, 2009), paper TUP6_9.

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Abstract

Focused ion beam technique has been applied to fabricate ring resonators in Ge-Sb-S thin films for optoelectronic applications. The CVD-grown Ge-Sb-S thin films have been characterizatezed by micro-Raman, scanning electron microscopy, energy dispersive X-ray analysis and UV-VIS-NIR spectroscopy and the properties of the resonator are being assessed.

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