GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition (MOCVD) were fabricated. A naturally textured p-GaN surface layer was achieved by controlling the growth temperature. The output power of the naturally textured surface L E D with 850 °C growth temperature increased > 50% than the commercial LED. The results show that the naturally textured surface L E D could extremely enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEDs.

© 2009 IEEE

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription