Abstract

GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition (MOCVD) were fabricated. A naturally textured p-GaN surface layer was achieved by controlling the growth temperature. The output power of the naturally textured surface L E D with 850 °C growth temperature increased > 50% than the commercial LED. The results show that the naturally textured surface L E D could extremely enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEDs.

© 2009 IEEE

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