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Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Pacific Rim 2007
  • (Optica Publishing Group, 2007),
  • paper WP_143

Formation of InGaN self-assembled quantum dots on GaN by metal-organic chemical vapor deposition with NH3 periodic interruption growth

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Abstract

Self-assembled InGaN QDs on GaN epi-layer were grown by metal-organic chemical vapor deposition. In the growth of InGaN QDs, NH3 was supplied in cyclic interrupted mode with interval of 3seconds and 5seconds. This work enables the fabrication of dense, uniform InGaN QDs, and is potentially applied to optical materials systems.

© 2007 IEEE

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