Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Pacific Rim 2007
  • (Optica Publishing Group, 2007),
  • paper WP_035

High-Power Broad-Band Superluminescent Diode Using Selective Area Growth at 1.5-μm Wavelength

Not Accessible

Your library or personal account may give you access

Abstract

Superluminescent diode with selectively grown multi-quantum-well layer was demonstrated. This light source consists of angled facet single-mode waveguide with a rear absorption region. High output power(77-mW), wide spectral bandwidth(71-nm FWHM), and a very small spectral modulation (0.7-dB) were achieved with a short absorption region length.

© 2007 IEEE

PDF Article
More Like This
100 mW High-Power Broadband Superluminescent Diode Using Selective Area Growth at 1.5-μm Wavelength

Jung Ho Song, Kisoo Kim, Young Ahn Leem, and Gyungock Kim
JWA44 National Fiber Optic Engineers Conference (NFOEC) 2008

150 mW High-Power Angled-Stripe Superluminescent Diode at 1550 nm

S. S. Saini, S. Merritt, O. Konoplev, Y. Hu, V. Luciani, R. Leavitt, P. J. S. Heim, D. Bowler, and M. Dagenais
CMJ2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2004

>90mW CW Superluminescent Output Power from Single-Angled Facet-Ridge Waveguide Diode at 1.5 µm

S. H. Cho, I. K. Han, Y. Hu, J. H. Song, P. J. S. Heim, M. Dagenais, F. G. Johnson, D. R. Stone, H. Shen, J. Pamulapati, and W. Zhou
5 Advanced Semiconductor Lasers and Their Applications (ASLA) 1999

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved