Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Pacific Rim 2007
  • (Optica Publishing Group, 2007),
  • paper WP_028

Influence of strong reverse-bias on the leakage behavior of light-emitting diodes

Not Accessible

Your library or personal account may give you access

Abstract

Leakage current is an important property in InGaN light-emitting diodes (LEDs). An LED chip is operated using strong reverse-bias to increase its leakage current. The leakage current behavior of the operated LED chip is compared with that of an unoperated LED chip.

© 2007 IEEE

PDF Article
More Like This
Bias-Controlled Coherent Acoustic Phonon Generation in InGaN/GaN Multiple-Quantum-Wells Light Emitting Diodes

Pei-Hsun Wang, Yu-Chieh Wen, Shi-Hao Guol, Hung-Cheng Lin, Peng-Ren Cheng, Jin-Wei Shi, Jen-Inn Chyi, Chih-Ming Lai, and Chi-Kuang Sun
IWD5 International Quantum Electronics Conference (IQEC) 2009

Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

Shih-Chun Ling, Te-Chung Wang, Tsung-Shine Ko, Tien-Chang Lu, Hao-Chung Kuo, and Shing-Chung Wang
WP_043 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2007

III-V Nitride Light-Emitting Diodes

Shuji Nakamura
AP6 Advanced Solid State Lasers (ASSL) 1995

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved