Abstract
A photoelectrochemical (PEC) oxidation method was used to directly grow oxide films on AlGaN surface as gate insulator for AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The threshold voltage of MOS-HEMT devices is -5V The gate leakage current is 50pA and 20pA at forward gate bias of Vgs=10V and reverse gate bias of Vgs= −10V, respectively. Maximum value of gm is 50ms/mm of Vgs biased at −2.09 V.
© 2007 IEEE
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