Abstract
We investigated the degradation modes in the aging processes of (Al, In)GaN laser diodes on bulk GaN substrates of the dislocation density less than 5×106 cm”2. The estimated lifetime exceeds 2,000 h under 160 mW pulse-operation at 60 °C. The lifetime-limiting degradation is attributed to nonradiative recombination related with the defects extended from GaN substrates.
© 2007 IEEE
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