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  • Conference on Lasers and Electro-Optics/Pacific Rim 2007
  • (Optica Publishing Group, 2007),
  • paper TuD2_4

Blueshifting of InGaAsP-InGaAsP MQW Laser Diodes Using a High-Energy Ion-Implantation Technique

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Abstract

Blueshifted laser diodes have been fabricated using a quantum well interdiffusion process based on high-energy ion implantation. Results obtained with the as-grown and implanted MQW wafers are compared. For the implanted laser structures, blueshifts as large as 200 nm were obtained.

© 2007 IEEE

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