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  • Conference on Lasers and Electro-Optics/Pacific Rim 2007
  • (Optica Publishing Group, 2007),
  • paper ThP_039

Effect of ion-irradiation-induced defect on the optically active Er ions in Er-doped silicon-rich silicon oxide

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Abstract

The effect of ion-irradiation induced defect on the optically active Er3+ ions in Er doped silicon-rich silicon oxide (SRSO) film is investigated. We find that the initial presence of defects strongly reduces the fraction of Er ions that can be excited via nc-Si even after their removal via high-temperature annealing.

© 2007 IEEE

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