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  • Conference on Lasers and Electro-Optics/Pacific Rim 2007
  • (Optica Publishing Group, 2007),
  • paper ThA2_4

The Influence of Strain on Electronic Structure of InAs/GaAs Quantum Dot with wetting layer

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Abstract

Using the axis-symmetry finite element numerical simulations, it is demonstrated that the strain distributions and wetting layer have great influences on the electronic structure of the self-organized quantum dot.

© 2007 IEEE

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