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  • Conference on Lasers and Electro-Optics/Pacific Rim 2007
  • (Optica Publishing Group, 2007),
  • paper ThA1_3

Reduction of Spacer Layer Thickness of InAs Quantum Dots Using GaNAs Strain Compensation Layer

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Abstract

Optical and morphological property of the InGaAs covered InAs QDs with GaNAs stress compensation layers (SCL) arc reported, focusing on the reduction of the spacer thickness for device applications. The suppression of inhomogeneous PI. broadening induced by the compressive strain from lower QD was observed by the GaNAs SCL. This result is effective for the suppression of the spacer thickness.

© 2007 IEEE

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