Abstract
Optical and morphological property of the InGaAs covered InAs QDs with GaNAs stress compensation layers (SCL) arc reported, focusing on the reduction of the spacer thickness for device applications. The suppression of inhomogeneous PI. broadening induced by the compressive strain from lower QD was observed by the GaNAs SCL. This result is effective for the suppression of the spacer thickness.
© 2007 IEEE
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