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  • Conference on Lasers and Electro-Optics/Pacific Rim 2007
  • (Optica Publishing Group, 2007),
  • paper PDPA_2

Degradation Analysis of 808 nm GaAsP Laser Diodes

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Abstract

Degradation data from accelerated life test of 808 nm strained GaAsP quantum well lasers are analyzed. The Eyring model and the statistical model of non-linear mixed effects are applied to estimate degradation parameters. The life time at operating condition is predicted at given confidence level.

© 2007 IEEE

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