Modeling of a 10GHz SiGe HBT EO Modulator

Shengling Deng; Tuhin Guha Neogi; Joseph Novak; John McDonald; Z. Rena Huang

doi:10.1364/CLEO.2010.JThE41

Conference on Lasers and Electro-Optics 2010
OSA Technical Digest (CD) (Optica Publishing Group, 2010),
paper JThE41
•https://doi.org/10.1364/CLEO.2010.JThE41

Modeling of a 10GHz SiGe HBT EO Modulator

Shengling Deng, Tuhin Guha Neogi, Joseph Novak, John McDonald, and Z. Rena Huang

Conference on Lasers and Electro-Optics 2010

San Jose, California United States
16–21 May 2010
ISBN: 978-1-55752-889-6

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Joint CLEO/QELS Poster Session III (JThE)

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S. Deng, T. G. Neogi, J. Novak, J. McDonald, and Z. R. Huang, "Modeling of a 10GHz SiGe HBT EO Modulator," in Conference on Lasers and Electro-Optics 2010, OSA Technical Digest (CD) (Optica Publishing Group, 2010), paper JThE41.

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Abstract

The modeling of an EO modulator based on SiGe Heterojunction Bipolar Transistor is presented. The device exhibits 10GHz switching speed with a π-phase shift length of 74μm. The total propagation loss is less than 4dB.

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