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Compact GaAs Electro-Optic (EO) Modulator with Ultra Low Switching Voltage and Large Bandwidth Enabled by Transparent Conducting (TC) Bridge Electrodes

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Abstract

We propose a compact GaAs EO modulator structure with ultra low switching voltage (~ 0.5V) and large modulation bandwidth (f3dBo ≈ 50GHz), enabled by transparent conducting (TC) material as bridge electrodes.

© 2010 Optical Society of America

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