Polarity-controlled Visible/IR Electroluminescence in Si-nanocrystal/Si Light-emitting Diodes

Zhihong Liu; Jiandong Huang; Pooran C. Joshi; Apostolos T. Voutsas; John Hartzell; Federico Capasso; Jiming Bao

doi:10.1364/CLEO.2010.CTuNN5

Conference on Lasers and Electro-Optics 2010
OSA Technical Digest (CD) (Optica Publishing Group, 2010),
paper CTuNN5
•https://doi.org/10.1364/CLEO.2010.CTuNN5

Polarity-controlled Visible/IR Electroluminescence in Si-nanocrystal/Si Light-emitting Diodes

Zhihong Liu, Jiandong Huang, Pooran C. Joshi, Apostolos T. Voutsas, John Hartzell, Federico Capasso, and Jiming Bao

Conference on Lasers and Electro-Optics 2010

San Jose, California United States
16–21 May 2010
ISBN: 978-1-55752-889-6

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Nanostructure Enhanced LEDs (CTuNN)

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Z. Liu, J. Huang, P. C. Joshi, A. T. Voutsas, J. Hartzell, F. Capasso, and J. Bao, "Polarity-controlled Visible/IR Electroluminescence in Si-nanocrystal/Si Light-emitting Diodes," in Conference on Lasers and Electro-Optics 2010, OSA Technical Digest (CD) (Optica Publishing Group, 2010), paper CTuNN5.

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Abstract

We report the demonstration of room-temperature two-color Si-nanocrystal/Si light-emitting diodes, which emit infrared light from silicon and visible emission from the Si-nanocrystal film when Si substrate is forward and reverse biased, respectively.

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