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Electrically Pumped Photonic Crystal Nanocavities Using a Laterally Doped p-i-n Junction

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Abstract

Ion implantation doping is used to define a laterally doped p-i-n junction to electrically pump a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Cavity coupled electroluminescence is demonstrated.

© 2010 Optical Society of America

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