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Conferences > CLEO > 2010 > CThL > CThL1

Novel Growth and Device Concepts for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes

Hongping Zhao, Guangyu Liu, Xiao-Hang Li, Yik-Khoon Ee, Hua Tong, Jing Zhang, G.S. Huang, and Nelson Tansu

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Abstract

The growths and characteristics of staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs are presented for high-efficiency green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal-quantum-efficiency, light-extraction-efficiency, and efficiency-droop in nitride LEDs are discussed.

© 2010 Optical Society of America

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