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High-Q SiO2-Clad Silicon Photonic Crystal Microcavities for Ultra-low Energy Switching

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Abstract

We outline the development of a SiO2-embedded silicon photonic crystal microcavity with Q above 10,000, which forms the basis for a CMOS-compatible electro-optic modulator with switching energy below 0.1 fJ/bit.

© 2010 Optical Society of America

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