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Conferences > CLEO > 2009 > JThE > JThE19
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper JThE19
  • •https://doi.org/10.1364/CLEO.2009.JThE19

Fabrication of highly stacked quantum dot laser

Kouichi Akahane, Naokatsu Yamamoto, and Tetsuya Kawanishi

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Abstract

We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.

© 2009 Optical Society of America

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