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Conferences > CLEO > 2009 > JThE > JThE12
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper JThE12
  • •https://doi.org/10.1364/CLEO.2009.JThE12

O-band InAs/InGaAs Quantum Dot Laser Diode with Sandwiched Sub-nano Separator (SSNS) Structures

Naokatsu Yamamoto, Hiroki Fujioka, Kouichi Akahane, Redouane Katouf, Tetsuya Kawanishi, Hiroshi Takai, and Hideyuki Sotobayashi

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Abstract

O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.

© 2009 Optical Society of America

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