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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CTuW6
  • https://doi.org/10.1364/CLEO.2009.CTuW6

Performance Comparison of Bottom and Top Emitting LWIR (8 μm) LED Devices

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Abstract

For similar GaSb substrate thickness, flip-chip mount bottom emitting LWIR LED device has higher light intensity than top emitting device. Enhanced emission is attributed to better cooling and reflection of light from anode metal surface of the device.

© 2009 Optical Society of America

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