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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CTuGG5
  • https://doi.org/10.1364/CLEO.2009.CTuGG5

Ultra-low-threshold GaSb-based Laser Diodes at 2.65 μm

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Abstract

We present the design and results of a continuous wave room temperature operating GaSb-based edge emitter at 2.65 μm with threshold current densities as low as 50 A/cm2 (L →∞).

© 2009 Optical Society of America

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