Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CTuGG4
  • https://doi.org/10.1364/CLEO.2009.CTuGG4

Room temperature, continuous wave operation of an Sb-based laser grown on GaAs substrate

Not Accessible

Your library or personal account may give you access

Abstract

We report on the first Sb-based type-I laser grown on GaAs substrate operating continuous-wave around 2.2 μm at room-temperature. The device was grown using solid-source molecular beam epitaxy and comprised two GaInAsSb quantum-wells embedded in AlGaAsSb barriers. Despite the large lattice-mismatch, a good crystalline quality was obtained, and processed devices operated continuous wave up to 50°C, with threshold current densities in the range of 1.5 to 2.2 kA/cm2. An optical output power of 3.7 mW was obtained at 20°C.

© 2009 Optical Society of America

PDF Article
More Like This
Demonstration of laser operation at room-temperature of an Sb-based mid-infrared multi-quantum-well structure monolithically grown on a Silicon substrate

J. B. Rodriguez, L. Cerutti, and E. Tournié
CPDA4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009

Modal Gain, Loss, and Thermal Resistance of a Metamorphic GaSb-Based Laser in Room-Temperature Continuous-Wave Operation at 2 μm

Paveen Apiratikul, Lei He, and Christopher J. K. Richardson
JTuI100 CLEO: Applications and Technology (CLEO:A&T) 2011

Room Temperature Continuous-Wave Operation of GaInNAs/GaAs VCSELs Grown by Chemical Beam Epitaxy with Output Power Exceeding 1mW

S. Makino, T. Miyamoto, T. Kageyama, Y. Ikenaga, N. Nishiyama, A. Matsutani, F. Koyama, and K. Iga
ThC3_3 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2001

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved