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Conferences > CLEO > 2009 > CTuF > CTuF5
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CTuF5
  • •https://doi.org/10.1364/CLEO.2009.CTuF5

Pulsed Metalorganic Chemical Vapor Deposition of In-Polar and N-Polar InN Semiconductors on GaN / Sapphire for Terahertz Applications

Hongping Zhao, M. Jamil, Guangyu Liu, G. S. Huang, Hua Tong, Guibao Xu, Yujie Ding, and Nelson Tansu

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Abstract

Narrow bandgap (0.77eV) In- and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25–2.0THz) with output power of 2.36μW.

© 2009 Optical Society of America

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