Single-Mode Quasi-L2 Photonic Crystal Micro-Cavity for 1.3 μm InAs Quantum Dots Light Sources

Yen-Chun Tseng; Shu-Ping Lee; Chun-Jung Wang; Pei-Chin Chiu; Wen-Yen Chen; Tzu-Min Hsu; Jen-Inn Chyi; Jen-Inn Chyi; Jen-Inn Chyi

doi:10.1364/CLEO.2009.CThM4

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
OSA Technical Digest (CD) (Optica Publishing Group, 2009),
paper CThM4
•https://doi.org/10.1364/CLEO.2009.CThM4

Single-Mode Quasi-L2 Photonic Crystal Micro-Cavity for 1.3 μm InAs Quantum Dots Light Sources

Yen-Chun Tseng, Shu-Ping Lee, Chun-Jung Wang, Pei-Chin Chiu, Wen-Yen Chen, Tzu-Min Hsu, and Jen-Inn Chyi

Conference on Lasers and Electro-Optics 2009

Baltimore, Maryland United States
31 May–5 June 2009
ISBN: 978-1-55752-869-8

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Quantum Materials Technology (CThM)

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Y. Tseng, S. Lee, C. Wang, P. Chiu, W. Chen, T. Hsu, and J. Chyi, "Single-Mode Quasi-L2 Photonic Crystal Micro-Cavity for 1.3 μm InAs Quantum Dots Light Sources," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optica Publishing Group, 2009), paper CThM4.

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Abstract

We design and realize a single mode qL2 photonic crystal defect cavity near the 1.3 μm band. Taking advantage of its small mode volume, 1.3 μm InAs quantum dot light emitters with this cavity exhibit an emission intensity as high as 70 times over the ones without it.

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