Low Temperature Sensitive, Deep-Well 4.8 µm Emitting Quantum Cascade Semiconductor Lasers

J. C. Shin; M. D’Souza; J. Kirch; L.J. Mawst; D. Botez; I. Vurgaftman; J. R. Meyer

doi:10.1364/CLEO.2009.CThC1

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
OSA Technical Digest (CD) (Optica Publishing Group, 2009),
paper CThC1
•https://doi.org/10.1364/CLEO.2009.CThC1

Low Temperature Sensitive, Deep-Well 4.8 µm Emitting Quantum Cascade Semiconductor Lasers

J. C. Shin, M. D’Souza, J. Kirch, L.J. Mawst, D. Botez, I. Vurgaftman, and J. R. Meyer

Conference on Lasers and Electro-Optics 2009

Baltimore, Maryland United States
31 May–5 June 2009
ISBN: 978-1-55752-869-8

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Quantum Cascade Lasers I (CThC)

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J. C. Shin, M. D’Souza, J. Kirch, L. J. Mawst, D. Botez, I. Vurgaftman, and J. R. Meyer, "Low Temperature Sensitive, Deep-Well 4.8 µm Emitting Quantum Cascade Semiconductor Lasers," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optica Publishing Group, 2009), paper CThC1.

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Abstract

A quantum-cascade laser design for suppressing carrier leakage from the active region was achieved. For both threshold and slope efficiency the characteristic temperatures, T₀ and T₁, reach values of 238 K over the 20-60^°C range

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