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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CMOO4
  • https://doi.org/10.1364/CLEO.2009.CMOO4

Growths of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at 520-525 nm Employing Graded-Temperature Profile

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Abstract

The use of 3-layer staggered InGaN quantum wells light-emitting diodes at 520-525 nm, grown by metal-organic chemical vapor deposition with graded-temperature profile, resulted in increase in efficiency and output power by 2-times.

© 2009 Optical Society of America

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