Abstract
InP-based, long-wavelength VCSELs utilizing a buried tunnel junction (BTJ), emitting at 1.55 µm with improved active region and reduced parasitics are demonstrated. A superior modulation-bandwidth >10 GHz is achieved up to 85°C. Potential bit-rates of 12.5 or even 17 Gb/s are feasible for cost-effective 100G Ethernet solutions at metro-range.
© 2009 Optical Society of America
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