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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CFK5
  • https://doi.org/10.1364/CLEO.2009.CFK5

The Bandwidth-Efficiency Product Enhancement of GaN Based Photodiodes by launching a Low-Temperature-Grown Recombination Center in Photo-Absorption Region

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Abstract

We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al0.2Ga0.8N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.

© 2009 Optical Society of America

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