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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper JThA23

Passively Mode-locked 832-nm Vertical-External-Cavity Surface-Emitting Semiconductor Laser Producing 15.3-ps Pulses at 1.9-GHz Repetition Rate

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Abstract

We report the first passively mode-locked 830-nm vertical-external-cavity surface-emitting laser. A semiconductor saturable absorber mirror with carrier recovery time governed by surface recombination was used to demonstrate pulses of 15.3 ps duration.

© 2008 Optical Society of America

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