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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper CThKK7

Revealing Subsurface Defects in Semiconductors Using Near-field Fluorescence Lifetime Imaging

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Abstract

Simultaneous near-field fluorescence lifetime imaging and atomic force microscopy identify radiative, interface and subsurface defect recombination sites in GaAs/GaInP heterostructures. Such unique characterization plays a significant role in identifying candidate samples for laser cooling.

© 2008 Optical Society of America

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