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Conferences > CLEO > 2008 > CThFF > CThFF6
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper CThFF6

First indirectly diode pumped Yb:SFAP laser, Reaching the watt level at 985 nm

Marc Castaing, François Balembois, Patrick Georges, Thierry Georges, Kathleen Schaffers, and John Tassano

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Abstract

We present the first demonstration of the three-level-laser transition at 985nm in an Yb:S-FAP crystal intracavity pumped at 914nm. We obtained 940mW output power at 985nm for 20W incident pump power at 808nm.

© 2008 Optical Society of America

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