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Conferences > CLEO > 2007 > CTuI > CTuI4
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
  • paper CTuI4

High Light-Extraction GaN-based Vertical LEDs With Double Diffuse Surfaces

Y. J. Lee, H.C. Kuo, T.C. Lu, and S.C. Wang

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Abstract

High light-extraction (external quantum efficiency ~40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. The high scattering efficiency of double diffused surfaces could be responsible for the high light output power.

© 2007 Optical Society of America

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