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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
  • paper CThGG3

Photoluminescence of GalnAsP/InP Single Quantum Wires With Lateral Widths Down To 6 nm Fabricated by Dry Etching and Regrowth

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Abstract

We measured photoluminescence of GaInAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth. Lateral quantum confinement energies up to 90 meV were systematically observed.

© 2007 Optical Society of America

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