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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
  • paper CThB3

Ultraviolet Lasing Characteristics of a GaN Photonic Crystal Defect Emitter

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Abstract

The fabricated GaN photonic crystal defect emitter demonstrated multimode lasing with a low optical pumping threshold of pulse engergy~0.15μJ. The device exhibited high spectral purity and enhanced spontaneous emission factor, β~0.045.

© 2007 Optical Society of America

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