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We propose the sub-band energy level controlling of QDs using an InGaAs GC-SRL. We were able to realize a large sub-band shift of 70 meV using a GC-SRL at the fourth-order energy level. Using the GC-SRL, we were able to control not only the sub-band energy level but also the confinement energy of these potential structures.
© 2007 Optical Society of America
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