Time-Resolved Photoluminescence of Nitrogen-Cluster States in Dilute Ga(NAs)/GaAs Heterostructures

K. Hantke; S. Horst; K. Kohli; S. Chatterjee; P. J. Klar; W. Stolz; W. W. Rühle; F. Masia; G. Pettinari; A. Polimeni; M. Capizzi

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
paper CMN3

Time-Resolved Photoluminescence of Nitrogen-Cluster States in Dilute Ga(NAs)/GaAs Heterostructures

K. Hantke, S. Horst, K. Kohli, S. Chatterjee, P. J. Klar, W. Stolz, W. W. Rühle, F. Masia, G. Pettinari, A. Polimeni, and M. Capizzi

Conference on Lasers and Electro-Optics 2007

Baltimore, Maryland United States
6–11 May 2007
ISBN: 1557528349

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Near-Infrared Semiconductor Materials (CMN)

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K. Hantke, S. Horst, K. Kohli, S. Chatterjee, P. J. Klar, W. Stolz, W. W. Rühle, F. Masia, G. Pettinari, A. Polimeni, and M. Capizzi, "Time-Resolved Photoluminescence of Nitrogen-Cluster States in Dilute Ga(NAs)/GaAs Heterostructures," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest Series (CD) (Optica Publishing Group, 2007), paper CMN3.

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Abstract

We investigate time-resolved photoluminescence in Ga(NAs)/GaAs. We find that energy relaxation of optically excited carriers from the conduction band into nitrogen-related cluster states depends on temperature, excitation density, and effective nitrogen concentration after hydrogenation.

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