Strong Lateral Confinement in Ga(AsSb)/GaAs/(AlGa)As Heterostructures

S. Horst; S. Chatterjee; K. Hantke; P.J. Klar; I. Nemeth; W. Stolz; K. Volz; C. Bückers; A. Thranhardt; S.W. Koch; G. Blume; G. Weiser; W. Rühle; S. R. Johnson; J.-B. Wang; Y.-H. Zhang

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
paper CMN2

Strong Lateral Confinement in Ga(AsSb)/GaAs/(AlGa)As Heterostructures

S. Horst, S. Chatterjee, K. Hantke, P.J. Klar, I. Nemeth, W. Stolz, K. Volz, C. Bückers, A. Thranhardt, S.W. Koch, G. Blume, G. Weiser, W. Rühle, S. R. Johnson, J.-B. Wang, and Y.-H. Zhang

Conference on Lasers and Electro-Optics 2007

Baltimore, Maryland United States
6–11 May 2007
ISBN: 1557528349

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Near-Infrared Semiconductor Materials (CMN)

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S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Nemeth, W. Stolz, K. Volz, C. Bückers, A. Thranhardt, S. W. Koch, G. Blume, G. Weiser, W. Rühle, S. R. Johnson, J. -. Wang, and Y. -. Zhang, "Strong Lateral Confinement in Ga(AsSb)/GaAs/(AlGa)As Heterostructures," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest Series (CD) (Optica Publishing Group, 2007), paper CMN2.

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Abstract

We investigate a series of Ga(AsSb)/GaAs/AlGaAs quantum wells, that show an additional inplane confinement. This is attributed to the formation of self-organized GaAsSb quantum-islands during growth with confinement energies of several hundred meV.

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