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Conferences > CLEO > 2007 > CME > CME3
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
  • paper CME3

MOCVD Epitaxy and Optical Properties of Self-Assembled InGaN Quantum Dots via Stranski-Kastranow Growth Mode Emitting at 520-nm

Yik-Khoon Ee, Ronald A. Arif, Muhammad Jamil, and Nelson Tansu

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Abstract

Self-assembled In0.35Ga0.65N quantum dots emitting at λ ~510-520 nm were realized by metalorganic chemical vapor deposition via Stranski-Kastranow growth mode, with quantum dots density of 4 × 109 cm−2.

© 2007 Optical Society of America

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