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Conferences > CLEO > 2007 > CMD > CMD6
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
  • paper CMD6

InP / AlGaInP on GaAs Quantum Dot Lasers

P. M. Smowton, M. Al-Ghamdi, and A.B. Krysa

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Abstract

MOVPE grown InP q-dot lasers have low 300K threshold current density (195 Acm−2 for 2000mm long device) and T0=105K (10-85°C) for 725-740nm emission. Homogenous broadening appears to be more pronounced than in InGaAs q-dots.

© 2007 Optical Society of America

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