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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CWD4

Intersubband Transition Device Using AlN Waveguide with GaN/AlN Quantum Wells

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Abstract

We demonstrate fabrication of the first AlN-waveguide-based intersubband transition device. The device can operate at 1.3 μm, confirmed with the new waveguide-coupling measurement method. The intersubband absorption saturation in the device is also successfully demonstrated.

© 2006 Optical Society of America

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