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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CTuX3

First Demonstration of Tensile Strained GaInNAs/InP Multi-Quantum-Well TM Laser Emitting at 1.55 μm

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Abstract

A new tensile strained material system, GaInNAs/InP, has been developed in order to achieve TM lasing around 1.55μm, for further isolator integration. First static and dynamic evaluation of such GaInNAs/InP multi-quantum-well lasers is reported.

© 2006 Optical Society of America

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