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Conferences > CLEO > 2006 > CTuS > CTuS7
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CTuS7

Control of Dopant Incorporation in InAs/GaAs Quantum Dots for Infrared Photodetection with Low Dark Current

Adrienne D. Stiff-Roberts, Zhiya Zhao, and Changhyun Yi

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Abstract

To reduce dark current in quantum-dot infrared photodetectors, different InAs/GaAs quantum-dot doping conditions, i.e. concentration and modulation- vs. delta-doping, have been investigated by the comparison of temperature-dependent dark current and corresponding activation energies vs. bias.

© 2006 Optical Society of America

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