A 10-Gbps In0.53Ga0.47As p-i-n Photodiode Receiver on Metamorphic InGaP Buffered GaAs Substrate

Yu-Sheng Liao; Gong-Ru Lin; Hao-Chung Kuo; Kai-Ming Feng; Milton Feng

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2006),
paper CThD1

A 10-Gbps In_0.53Ga_0.47As p-i-n Photodiode Receiver on Metamorphic InGaP Buffered GaAs Substrate

Yu-Sheng Liao, Gong-Ru Lin, Hao-Chung Kuo, Kai-Ming Feng, and Milton Feng

Conference on Lasers and Electro-Optics 2006

Long Beach, California United States
21–26 May 2006
ISBN: 1-55752-813-6

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Receivers and Detectors (CThD)

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Y. Liao, G. Lin, H. Kuo, K. Feng, and M. Feng, "A 10-Gbps In0.53Ga0.47As p-i-n Photodiode Receiver on Metamorphic InGaP Buffered GaAs Substrate," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2006), paper CThD1.

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Abstract

In_0.53Ga_0.47As p-i-n photodiode based OC-192 receiver grown on linearly graded metamorphic In_xGa_1-xP buffered GaAs with ultra-low dark current of 3.6fAμm², switching response of 41ps, bit-error-rate of 10⁻¹², and sensitivity of -19dBm are reported.

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