Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 2006 > CMBB > CMBB5
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CMBB5

Effect of Compressive Strain on Differential Gain of GaSb-based Type-I QW Lasers

L. Shterengas, G. Belenky, J.G. Kim, A. Gourevitch, D. Donetsky, D. Westerfeld, and R. Martinelli

Not Accessible

Your library or personal account may give you access

Abstract

2.35μm GaSb-based diode lasers with QW compressive strains of 1.2 and 1.7% were designed and fabricated. Devices with heavily strained active region exhibit three times higher differential gain and half the threshold current.

© 2006 Optical Society of America

PDF Article
More Like This
Carrier capture and recombination in 2.4µm GaSb-based type-I quantum well high power diode lasers

L. Shterengas, D. Donetsky, M. Kisin, and G. Belenky
JWA126 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007

Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures

L. Shterengas, A. Ongstad, R. Kaspi, S. Suchalkin, G. Belenky, M. Kisin, and D. Donetsky
JWB1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006

Theoretical Analysis of Gain in Compressive Strained Quantum Well InAlAsSb/GaSb Structures for 3-4 μm Lasers

R.F. Nabiev, C.J. Chang-Hasnain, and H.K. Choi
MB.6 Semiconductor Lasers: Advanced Devices and Applications (ASLA) 1995

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use